All-2D spin-orbitronics for efficient magnetic memories
The Swedish Research Council reached a decision on November 7, 2022 on project grants and starting grants within Natural and Engineering Sciences. The Department of Physics and Astronomy is granted 27 430 000 SEK for the period 2023-2026 for in total six project grants and one starting grant. The projects will begin during 2023.
Project title: All-2D spin-orbitronics for efficient magnetic memories
Main applicant: Biplab Sanyal, Division of Materials Theory
Grant amount: SEK 3 700 000 for the period 2023-2026
In the realm of spintronics, spin-orbit torque generated by spin Hall effect or interfacial Rashba-Edelstein effect has given rise to a new technology for magnetization switching offering faster dynamics and better endurance. However, theoretical analysis for explaining a vast amount of experimental data is lacking. Here, we will build up an ab initio computational framework to calculate spin Hall conductivity for realistic interfacial geometries obtained from density functional theory and Wannier functions, which will be validated experimentally. Evolutionary structure prediction algorithm will be used for generation of new 2D materials followed by the examination of their stability and topological characteristics to build up a database of suitable 2D materials. 2D ferromagnets will be characterized by considering electron correlation and complex magnetic exchange interactions. For the heterostructures, many body perturbation theory will be used to study weak dielectric screening effects at the interface between 2D materials along with time-reversal symmetry breaking in topologically protected states in the presence of out-of-plane magnetization of the ferromagnet. Finally, magnetization switching will be studied using Landau-Lifshitz-Gilbert spin dynamics simulations in present of spin-orbit torque. Our joint theoretical and experimental study will provide a solid understanding of materials aspects of spin orbit torques and foster development of an ‘all-2D’ nanodevice.